分析手法

We provide two-dimensional nanoscale electrical properties measurement and imaging. Advanced electrical characterization technology and research into next generation semiconductor production equipment are our focus.

分析案例

Advanced analysis of devices including solar cells, CMOS sensor, logic/power devices and other third generation of semiconductor materials such as GaN & SiC are provided.

技术研发

Experts with decades of industry experience give the partners professional and Personalized solutions

委托指南

Our purpose is to provide professional and high-quality service. We look forward to serving you.

时事新闻

Cutting-edge information about detection and analysis technologies are available here

了解我们

Contact our team for business consulting and academic collaboration

2026-01-15

Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures
2025-12-30

High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon
2025-12-23

Degradation Processes in Positive Electrode Composites for All-Solid-State Lithium-Ion Batteries Visualized by Scanning Spreading Resistance Microscopy
2025-10-20

Van der Waals Ferroelectric CuCrP2S6-Enabled Hysteresis-Free Negative Capacitance Field-Effect Transistors
2025-10-15

A Scanning Microwave Impedance Microscopy Study of α-In2Se3 Ferroelectric Semiconductor
2025-10-11

Direct visualization of edge state in evenlayer MnBi2Te4 at zero magnetic field
2025-10-11

2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors
2025-10-09

Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
2025-09-17

国智维参展CIOE，圆满收官