分析手法
We provide two-dimensional nanoscale electrical properties measurement and imaging. Advanced electrical characterization technology and research into next generation semiconductor production equipment are our focus.
分析案例
Advanced analysis of devices including solar cells, CMOS sensor, logic/power devices and other third generation of semiconductor materials such as GaN & SiC are provided.
技术研发
Experts with decades of industry experience give the partners professional and Personalized solutions
分析手法
分析案例
技术研发
案例一 利用C-AFM（Conductive Atomic Force Microscopy）图像内 RL0 和 RL1之间阻值的斜率，可以近似得到该双层石墨烯的电阻率。
Ø案例二 利用SMM（Scanning Microweive Microscope）测定标准SRAM样品表面形貌、电容、电导率、载流子浓度等参数的分布。
Ø案例三 利用C-AFM（Conductive Atomic Force Microscopy）电分布图(左图)的衬度对比发现了同一位置下在BSE-SEM 图(右图)中未能完全找到的覆盖在衬底上的极薄多层石墨烯(MLG)成分。
Ø案例四 利用SMM（Scanning Microweive Microscope）观察OX或IMP区域在层间介质或衬底中的电性分布。
